WS-300
直線/曲線或特定位置開槽、鑽孔皆可實現。
為全自動設備,最大工作範圍為12吋晶圓:
滿足現在及未來的生產需求。
Workpiece |
Diameter |
12” wafer-form |
Flattening mechanism |
<6mm, |
|
Laser & Optics |
Type |
Femto-second laser |
Power |
<15W |
|
Repetition rate |
<1MHz |
|
Processing speed |
<2000mm/sec |
|
In-situ power monitor |
||
Moving stage |
Working area |
310x310mm max. |
Speed |
1000mm/sec, max. |
|
Resolution |
0.1um |
|
Position accuracy |
<3um |
|
Z-axis |
Stroke |
+/- 3 mm |
Repeatability |
1um, single direction |
|
θ-axis |
Stroke |
<190° |
Repeatability |
<2 arc-sec |
|
Vision |
Quantity |
High & low magnification |
Resolution |
0.56um for high magnification |
|
Spin Processor |
Spin speed |
<3000rpm |
Clean nozzle |
High pressure or Atomizer nozzle selectable |
|
Coating nozzle |
flow-rate controlled |
|
Drying nozzle |
Pressure regulated |
|
CO2 snow processor |
Function |
Debris & residue removal |
Spin speed |
<3000rpm |
|
CO2 consumption |
<100g/min., |
|
Plasma processor |
Function |
Defect, debris & residue removal |
Working pressure |
<200 mtorr |
|
Processing gas |
CF4/SF6 |
|
MW power |
<3000W |