• WS-300

WS-300

為全自動設備,最大工作範圍為12吋晶圓,
直線/曲線或特定位置開槽、鑽孔皆可實現。

為全自動設備,最大工作範圍為12吋晶圓

-冷加工,實現無崩邊、不脫層、不傷底材及低(或無)殘留的加工。
-加工能力強,直線/曲線或特定位置開槽、鑽孔皆可實現。
-針對開槽的應用,特別容易實現寬溝槽或深溝槽。
-適用多種材料,如Si, low-k, GaN, SiOx, SiNx, Al, Cu, Ni, SiC, Sapphire,  EMC ….等。
-多重操作方式,可參數式設定或載入DXF檔定義加工路徑。
-可選配:
•CO2 snow processor實現完全無殘留的加工。
•Plasma processor實現高強度晶粒。
-通過Semi-S2認證

滿足現在及未來的生產需求。

Workpiece

Diameter

12” wafer-form

Flattening mechanism
(Optional)

<6mm,
Warpage suppression

Laser & Optics

Type

Femto-second laser

Power

<15W

Repetition rate

<1MHz

Processing speed

<2000mm/sec

In-situ power monitor

Moving stage

Working area

310x310mm max.

Speed

1000mm/sec, max.

Resolution

0.1um

Position accuracy

<3um

Z-axis

Stroke

+/- 3 mm

Repeatability

1um, single direction

θ-axis

Stroke

<190°

Repeatability

<2 arc-sec

Vision

Quantity

High & low magnification

Resolution

0.56um for high magnification

Spin Processor

Spin speed

<3000rpm

Clean nozzle

High pressure or Atomizer nozzle selectable

Coating nozzle

flow-rate controlled

Drying nozzle

Pressure regulated

CO2 snow processor
(Optional)

Function

Debris & residue removal

Spin speed

<3000rpm

CO2 consumption

<100g/min.,
Siphon type Bombe

Plasma processor
(Optional)

Function

Defect, debris & residue removal

Working pressure

<200 mtorr

Processing gas

CF4/SF6

MW power

<3000W