• GC-200

GC-200

為全自動設備,最大工作範圍為8吋晶圓,
實現近乎無崩邊、側壁平順及低(或無)殘留的加工。

為全自動設備,最大工作範圍為8吋晶圓

冷加工,實現近乎無崩邊、側壁平順(Ra<1um)及低(或無)殘留的加工。
加工能力強,矩形或異形的切割皆可實現。
•適用多種透明材料,如Glass, Quartz, Sapphire, SiC….等。
多重操作方式,可參數式設定或載入DXF檔定義加工路徑。
•可選配:
•機械裂片、擴張模組
•V-cut模組
•鑽孔模組
通過Semi-S2認證

滿足現在及未來的生產需求。

Workpiece

Diameter

8” wafer

Thickness

<2.5mm

Carrier

Wafer mounted on the dicing frame

Laser & Optics

Type

Pico-econd laser

Power

<50W or <150W

Repetition rate

<600kHz

In-situ power monitor

Moving stage

Working area

210x210mm max.

Speed

1000mm/sec, max.

Resolution

0.1um

Position accuracy

<3um for cutting

<5um for drilling

Z-axis

Stroke

+/- 3 mm

Repeatability

1um, single direction

θ-axis

Stroke

<190°

Repeatability

<2 arc-sec

Vision

Quantity

High & low magnification

Resolution

0.56um for high magnification

Mechanical breaking

(Optional)

Air blow

2~4kg/cm2

Roller ejection amount

0~10mm

Upthrust amount

0~20mm

Via drilling

(Optional software)

Data input

DXF

Raster mode available

V-cut optics

(Optional)

Single or multi foci switchable

Working distance

1mm