• WD-200

WD-200

為全自動設備，最大工作範圍為8吋晶圓。
實現無崩邊、不脫層、不傷底材及低(或無)殘留的加工。

為全自動設備，最大工作範圍為8吋晶圓：

-冷加工，實現無崩邊、不脫層、不傷底材及低(或無)殘留的加工。
-加工能力強，等間距/不等間距晶粒皆可切割。
-適用多種材料，如Si, low-k, GaN, GaAs, Al, Cu, Ni, EMC, … 等。
-多重操作方式，可參數式設定或載入DXF檔定義加工路徑。
-可選配：
•CO2 snow processor實現完全無殘留的加工。
•Plasma processor實現高強度晶粒。
-通過Semi-S2認證。

滿足現在及未來的生產需求。

Workpiece

Diameter

8” wafer

Carrier

Wafer mounted on the dicing frame

Laser & Optics

Type

Femto-second laser

Power

<20W

Repetition rate

<1MHz

Processing speed

<2000mm/sec

In-situ power monitor

Moving stage

Working area

210x210mm max.

Speed

1000mm/sec, max.

Resolution

0.1um

Position accuracy

<3um

Z-axis

Stroke

+/- 3 mm

Repeatability

1um, single direction

θ-axis

Stroke

<190°

Repeatability

<2 arc-sec

Vision

Quantity

High & low magnification

Resolution

0.56um for high magnification

Spin Processor

Spin speed

<3000rpm

Clean nozzle

High pressure or Atomizer nozzle selectable

Coating nozzle

flow-rate controlled

Drying nozzle

Pressure regulated

CO2 snow processor
(Optional)

Function

Debris & residue removal

Spin speed

<3000rpm

CO2 consumption

<100g/min.,
Siphon type Bombe

Plasma processor
(Optional)

Function

Defect, debris & residue removal

Working pressure

<200 mtorr

Processing gas

CF4/SF6

MW power

<3000W