• WS-300

WS-300

4~12 inch wafer available


Wafer

Diameter

4”~12” wafer mounted on the dicing frame

Thickness

0.1~12mm

Warpage

0.5~5mm, before tape mounting

Carrier

12” dicing frame

Laser & Optics

Laser

Wavelength

517±5nm

Pulse energy

20uJ @ 1MHz

Pulse width

<350fs

Repetition rate

<1MHz

Optics

Scan area

43x43mm, max.

Scan speed

<3000mm/sec

Spot size, output

10~22um, adjustable

Laser power detection

Laser power can be checked periodically by external power meter.

Laser beam center calibration

The center position of the laser beam can be calibrated periodically.

Quantity

1


Mechanism & vision system

Index axis

Function

To index the wafer pitch-by-pitch,
Driven by the linear motor with the linear scale

Stroke

310mm max.

Speed

300mm/sec

Resolution

0.1um

Position accuracy

<3um

Feeding axis

Function

To feed the wafer beneath the laser beam,
Driven by the linear motor with the linear scale

Stroke

310mm max.

Speed

1000mm/sec, max.

Resolution

0.1um

Z-axis

Function

Adjustment for the working distance of laser beam.
Driven by the bolt screw with the stepping motor

Stroke

+/- 3 mm

Repeatability

1um, single direction

θ-axis

Function

Work with the top CCD to define the wafer center and the first kerf position.
Change the scribing direction.
Driven by DD motor with the rotary encoder.
Software function can offset the error of 90 degree rotation by inputting an angular offset.

Stroke

<190°

Repeatability

<1 arc-sec